RJE0605JPD_15 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

RJE0605JPD
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
−10 V
−10
−7 V
−6 V
−8
−5.5 V
−5 V
−4.5 V
−6
−4
−4 V
−2
Pulse Test
00
−2 −4
V_GS = 0 V
−6 −8 −10
Drain to Source Voltage V_DS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
−1000
Pulse Test
−800
−600
−400
I_D = −5 A
−200
−1 A
−2 A
0
0
−2 −4 −6 −8 −10
Gate to Source Voltage V_GS (V)
REJ03G1803-0100 Rev.1.00
Apr 01, 2010
Preliminary
Maximum Safe Operation Area
−100
Ta = 25°C
Thermal shut down operation area
−10
PW = 10 ms
−1
−0.1
−0.01
DC Operation
(Tc = 25°C)
Operation
in this area
is limited R_DS(on)
−0.1
−1
−10
−100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
−10
Tc = −40°C
25°C
−8
150°C
−6
150°C
−4
−2
00
−2 −4
25°C
Tc = −40°C
V_DS = −10 V
Pulse Test
−6 −8 −10
Gate to Source Voltage V_GS (V)
Static Drain to Source On State Resistance
vs. Drain Current
1000
100
−6 V
V_GS = −10 V
10
Pulse Test
1
−0.1
−1
−10
Drain Current I_D (A)
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