RJE0605JPD_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

RJE0605JPD
Silicon P Channel MOS FET Series
Power Switching
Preliminary Datasheet
REJ03G1803-0100
Rev.1.00
Apr 01, 2010
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
 Logic level operation (–6 V Gate drive).
 Built-in the over temperature shut-down circuit.
 High endurance capability against to the short circuit.
 Latch type shut down operation (need 0 voltage recovery).
 Built-in the current limitation circuit.
 Low on-resistance R_DS(on): 58 m Typ, 75 m Max (V_GS = –10 V)
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
D
4
1
2
3
Current
G
Gate Resistor
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
1. Gate
2. Drain
3. Source
4. Drain
S
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
V_DSS
V_GSS
Gate to source voltage
Drain current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
V_GSS
I_D ^Note3
I_DR
I_AP ^{Note 2}
E_AR ^{Note 2}
Pch ^{Note 1}
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25C
2. Tch = 25C, Rg  50 
3. It provides by the current limitation lower bound value.
Ratings
–60
–16
2.5
–10
–10
–7
210
30
150
–55 +150
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
C
C
REJ03G1803-0100 Rev.1.00
Apr 01, 2010
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