RJE0605JPD_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

RJE0605JPD
Static Drain to Source On State Resistance
vs. Temperature
140
Pulse Test
120
100
−5 A
−2 A
I_D = −1 A
80
−5 A
−6 V
60
−2 A
I_D = −1 A
40
V_GS = −10 V
20
-50 -25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
1000
di / dt = 100 A / μs
V_GS = 0, Ta = 25°C
100
10
−0.1
−1
−10
Reverse Drain Current I_DR (A)
Reverse Drain Current vs.
Source to Drain Voltage
−10
−8
−6
V_GS = 0 V, 5 V
−4
−5 V
−2
Pulse Test
0
−0.4 −0.8 −1.2 −1.6 −2.0
Source to Drain Voltage V_SD (V)
Preliminary
Forward Transfer Admittance vs.
Drain Current
1000
V_DS = −10 V
Pulse Test
100
Tc = −40°C
10
25°C
150°C
1
0.1
−0.1
−1
−10
Drain Current I_D (A)
−100
Switching Characteristics
10
V_GS = −10 V, V_DD = −30 V
PW = 300 μs, duty ≤ 1 %
td(on)
tr
td(off)
tf
1
−0.1
−1
−10
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
1000
Coss
100
0 −10 −20 −30 −40 −50 −60
Drain to Source Voltage V_DS (V)
REJ03G1803-0100 Rev.1.00
Apr 01, 2010
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