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RJE0605JPD_15 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching | |||
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RJE0605JPD
Preliminary
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes; 4. Pulse test
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH(sd)1
IIH(sd)2
Tsd
Min
â3.5
â
â
â
â
â
â
â
Vop
ID limt
â3.5
â10
Typ
â
â
â
â
â
â0.8
â0.35
175
Max
â
â1.2
â100
â50
â1
â
â
â
â
â12
â
â
Unit
V
V
ïA
ïA
ïA
mA
mA
ï°C
V
A
(Ta = 25°C)
Test Conditions
Vi = â8 V, VDS = 0
Vi = â3.5 V, VDS = 0
Vi = â1.2 V, VDS = 0
Vi = â8 V, VDS = 0
Vi = â3.5 V, VDS = 0
Channel temperature
(dv/dt VGS ï³ 500 V/ms)
VGS = â12 V, VDS = â10 V Note 4
Electrical Characteristics
Item
Symbol Min
Typ
Max
Unit
Drain current
Drain to source breakdown
voltage
ID1
â
â
â4
A
ID2
â
â
â10
mA
ID3
â10
â
â
A
V(BR)DSS
â60
â
â
V
Gate to source breakdown
V(BR)GSS
â16
â
â
V
voltage
V(BR)GSS
2.5
â
â
V
Gate to source leak current
IGSS1
â
â
â100
ïA
IGSS2
â
â
â50
ïA
IGSS3
â
â
â1
ïA
IGSS4
â
â
100
ïA
Input current (shut down)
IGS(OP)1
â
â0.8
â
mA
IGS(OP)2
â
â0.35
â
mA
Zero gate voltage drain current
IDSS
â
â
â10
ïA
Gate to source cutoff voltage
VGS(off)
â2.2
â
â3.4
V
Forward transfer admittance
|yfs|
4
8
â
S
Static drain to source on state
RDS(on)
â
75
110
mï
resistance
RDS(on)
â
58
75
mï
Output capacitance
Coss
â
355
â
pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward
voltage
td(on)
â
4.5
â
ïs
tr
â
4.0
â
ïs
td(off)
â
1.8
â
ïs
tf
â
1.3
â
ïs
VDF
â
0.87
â
V
Body-drain diode reverse
recovery time
trr
â
209
â
ns
Over load shut down
operation time Note 6
tos1
â
2.3
â
ms
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
VGS = â3.5 V, VDS = â10 V
VGS = â1.2 V, VDS = â10 V
VGS = â12 V, VDS = â10 V Note 5
ID = â10 mA, VGS = 0
IG = â800 ïA, VDS = 0
IG = 100 ïA, VDS = 0
VGS = â8 V, VDS = 0
VGS = â3.5 V, VDS = 0
VGS = â1.2 V, VDS = 0
VGS = 2.4 V, VDS = 0
VGS = â8 V, VDS = 0
VGS = â3.5 V, VDS = 0
VDS = â60 V, VGS = 0
VDS = â10 V, ID = â1 mA
ID = â5 A, VDS = â10 V Note 5
ID = â5 A, VGS = â6 V Note 5
ID = â5 A, VGS = â10 V Note 5
VDS = â10 V, VGS = 0, f = 1MHz
VGS = -10 V, ID= â5 A, RL = 6 ï
IF = â10 A, VGS = 0
IF = â10 A, VGS = 0
diF/dt = 50 A/ïs
VGS = â6 V, VDD = â16 V
REJ03G1803-0100 Rev.1.00
Apr 01, 2010
Page 2 of 6
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