R1EV58064BXXN_15 Datasheet, PDF (5/25 Pages) Renesas Technology Corp – 64K EEPROM (8-Kword × 8-bit) Ready/Busy function

R1EV58064BxxN Series/R1EV58064BxxR Series
DC Characteristics
Parameter
Input leakage current
Output leakage current
Standby V_CC current
Operating V_CC current
Symbol
I_LI
I_LO
I_CC1
I_CC2
I_CC3
Min
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
1 to 2
⎯
⎯
Max Unit
2*¹ μA
2 μA
5 μA
1 mA
6 mA
⎯
⎯
10 mA
⎯
⎯
15 mA
⎯
⎯
25 mA
Output low voltage
V_OL
⎯
⎯
0.4 V
Output high voltage
V_OH V_CC × 0.8
⎯
⎯V
Note: 1. I_LI on RES : 100 µA max (only the R1EV58064BxxR series)
(Ta = −40 to +85°C, V_CC = 2.7 to 5.5 V)
Test conditions
V_CC = 5.5 V, Vin = 5.5 V
V_CC = 5.5 V, Vout = 5.5/0.4 V
CE = V_CC
CE = V_IH
Iout = 0 mA, Duty = 100%,
Cycle = 1 µs at V_CC = 3.6 V
Iout = 0 mA, Duty = 100%,
Cycle = 1 µs at V_CC = 5.5 V
Iout = 0 mA, Duty = 100%,
Cycle = 100 ns at V_CC = 3.6 V
Iout = 0 mA, Duty = 100%,
Cycle = 70 ns at V_CC = 5.5 V
I_OL = 2.1 mA
I_OH = −400 μA
Capacitance
(Ta = +25°C, f = 1 MHz)
Parameter
Input capacitance
Output capacitance
Symbol
Min
Typ
Max
Unit
Test conditions
Cin*¹
⎯
⎯
6
pF Vin = 0 V
Cout*¹
⎯
⎯
12
pF Vout = 0 V
Note: 1. This parameter is sampled and not 100% tested.
R10DS0207EJ0100 Rev.1.00
Jun 09, 2014
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