R1EV58064BXXN_15 Datasheet, PDF (17/25 Pages) Renesas Technology Corp – 64K EEPROM (8-Kword × 8-bit) Ready/Busy function

R1EV58064BxxN Series/R1EV58064BxxR Series
WE, CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
Write/Erase Endurance and Data Retention Time
The endurance is 10⁵ cycles (1% cumulative failure rate). The data retention time is more than 10 years.
Data Protection
To prevent this phenomenon, this device has a noise cancellation function that cuts noise if its width is 15 ns or less.
1. Data Protection against Noise on Control Pins (CE, OE, WE) during Operation
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming
mode by mistake. Be careful not to allow noise of a width of more than 15 ns on the control pins.
WE
CE
V_IH
0V
V_IH
OE
0V
15 ns max
R10DS0207EJ0100 Rev.1.00
Jun 09, 2014
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