R1EV58064BXXN_15 Datasheet, PDF (1/25 Pages) Renesas Technology Corp – 64K EEPROM (8-Kword × 8-bit) Ready/Busy function

R1EV58064BxxN Series
R1EV58064BxxR Series
64K EEPROM (8-Kword × 8-bit)
Ready/Busy function
RES function (R1EV58064BxxR)
Data Sheet
R10DS0207EJ0100
Rev.1.00
Jun 09, 2014
Description
Renesas Electronics’ R1EV58064BxxN series and R1EV58064BxxR series are electrically erasable and programmable
EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power consumption and high
reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They
also have a 64-byte page programming function to make their write operations faster.
Features
• Single supply: 2.7 to 5.5 V
• Access time:
⎯ 100 ns (max) at 2.7 V ≤ V_CC < 4.5 V
⎯ 70 ns (max) at 4.5 V ≤ V_CC ≤ 5.5 V
• Power dissipation:
⎯ Active: 20 mW/MHz (typ)
⎯ Standby: 110 μW (max)
• On-chip latches: address, data, CE, OE, WE
• Automatic byte write: 10 ms (max)
• Automatic page write (64 bytes): 10 ms (max)
• Ready/Busy
• Data polling and Toggle bit
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MONOS cell technology
• 10⁵ or more erase /write cycles
• 10 or more years data retention
• Software data protection
• Write protection by RES pin (only the R1EV58064BxxR series)
• Temperature range: −40 to +85°C
• There are lead free products.
R10DS0207EJ0100 Rev.1.00
Jun 09, 2014
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