R1EV58064BXXN_15 Datasheet, PDF (4/25 Pages) Renesas Technology Corp – 64K EEPROM (8-Kword × 8-bit) Ready/Busy function

R1EV58064BxxN Series/R1EV58064BxxR Series
Operation Table
Operation
CE
OE
WE
RES*³
Read
Standby
V_IL
V_IL
V_IH
V_H*¹
V_IH
×*²
×
×
Write
V_IL
V_IH
V_IL
V_H
Deselect
V_IL
V_IH
V_IH
V_H
Write Inhibit
×
×
V_IH
×
Write Inhibit
×
V_IL
×
×
Data Polling
V_IL
V_IL
V_IH
V_H
Program reset
×
×
×
V_IL
Notes: 1. Refer to the recommended DC operating conditions.
2. × : Don’t care
3. This function supported by only the R1EV58064BxxR series.
RDY/Busy
High-Z
High-Z
High-Z to V_OL
High-Z
⎯
⎯
V_OL
High-Z
I/O
Dout
High-Z
Din
High-Z
⎯
⎯
Dout (I/O7)
High-Z
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage relative to V_SS
V_CC
–0.6 to +7.0
V
Input voltage relative to V_SS
Vin
–0.5*¹ to +7.0*³
V
Operating temperature range *²
Topr
–40 to +85
°C
Storage temperature range
Tstg
–55 to +125
°C
Notes: 1. Vin min : –3.0 V for pulse width ≤ 50 ns.
2. Including electrical characteristics and data retention.
3. Should not exceed V_CC + 1 V.
Recommended DC Operating Conditions
Parameter
Symbol
Min
Typ
Supply voltage
V_CC
2.7
—
Input voltage
V_SS
0
0
V_IL
–0.3*¹
—
V_IH
2.4*²
—
V_H*⁴
V_CC – 0.5
—
Operating temperature
Topr
–40
—
Notes: 1. V_IL min: –1.0 V for pulse width ≤ 50 ns.
2. V_IH = 3.0 V for V_CC = 3.6 to 5.5 V.
3. V_IH max: V_CC + 1.0 V for pulse width ≤ 50 ns.
4. This function is supported by only the R1EV58064BxxR series.
5. V_IL = 0.8 V for V_CC = 3.6 V to 5.5 V
Max
5.5
0
0.6*⁵
V_CC + 0.3*³
V_CC + 1.0
+85
Unit
V
V
V
V
V
°C
R10DS0207EJ0100 Rev.1.00
Jun 09, 2014
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