NP75P04YLG Datasheet, PDF (5/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP75P04YLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
18 ^{ID = −37.5 A}
Pulsed
16
14
12
VGS = −5 V
10
8
−10 V
6
4
2
0
-100 -50 0 50 100 150 200
T_ch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
td(of f )
100
tf
td( on)
10
tr
1
-0.1
-1
VDD = −20 V
VGS = −10 V
RG = 0 Ω
-10
-100
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
-1000
-100
-10
VGS = −10 V
0V
-1
Pulsed
-0.1
0
0.5
1
1.5
V_F(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
100
10
-0.1
-1
Cr ss
VGS = 0 V
f = 1 MHz
-10
-100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-40
-35
-30
-25
-20
-15
-10
-5
-0
0
VDD = −32 V
−20 V
−8 V
-12
-10
-8
V GS
-6
-4
V DS
-2
ID = −75 A
-0
20
40
60
80 100
Q_G - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
di/dt = −100 A/μs
VGS = 0 V
1
10
100
I_F - Drain Current - A
R07DS0183EJ0200 Rev.2.00
Mar 16, 2011
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