NP75P04YLG Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP75P04YLG
-300
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-250
-200
-150
VGS = −10 V
−5 V
-100
-50
0
0
Pulsed
-1 -2 -3 -4 -5 -6 -7 -8
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
-2.5
VDS = VGS
-2
ID = −250 μA
-1.5
-1
-0.5
0
-100 -50 0 50 100 150 200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
35
Pulsed
30
25
20
15
10
VGS = −5 V
5
−10 V
0
-0.1
-1
-10
-100 -1000
I_D - Drain Current - A
R07DS0183EJ0200 Rev.2.00
Mar 16, 2011
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
-1000
-100
-10
-1
-0.1
-0.01
-0.001
0
125°C
150°C
175°C
-1
-2
TA = −55°C
−25°C
25°C
75°C
VDS = −10 V
Pulsed
-3
-4
-5
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
TA = −55°C
−25°C
25°C
75°C
10
125°C
150°C
175°C
1
-0.1
-1
VDS = −5 V
Pulsed
-10
-100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
25
Pulsed
20
15
ID = −75 A
−37.5 A
−15 A
10
5
0
0
-5
-10
-15
-20
V_GS - Gate to Source Voltage - V
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