NP75P04YLG Datasheet, PDF (3/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP75P04YLG
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
-100
R
DS(on) ^{L=im−1it0edV)}
(V^GS
I_D(pulse)
PW=100_μs
-10
Power Dissipation Limited
-1
Tc=25℃
Single Pulse
-0.1
-0.1
-1
-10
-100
V_DS - Drain to Source Voltage - V
Chapter Title
160
140
120
100
80
60
40
20
0
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25 50 75 100 125 150 175
T_C - Case Temperature - °C
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A): 150°C/W
10
Rth(ch-C): 1.09°C/W
1
0.1
Single pulse
Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
0.01
100 μ
1m
10 m 100 m
1
10
100
PW - Pulse Width - s
1000
R07DS0183EJ0200 Rev.2.00
Mar 16, 2011
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