HAT2165N Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2165N
Reverse Drain Current vs.
Source to Drain Voltage
100
80
10 V
5V
V_GS = 0
60
Maximum Avalanche Energy vs.
Channel Temperature Derating
100
I _AP = 30 A
80
V _DD = 15 V
duty < 0.1 %
Rg > 50 Ω
60
40
40
20
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
20
0
25 50 75 100 125 150
Channel Temperature Tch (˚C)
Vin
15 V
Avalanche Test Circuit
V DS
Monitor
Rg
50 Ω
L
I AP
Monitor
D. U. T
VDD
Avalanche Waveform
E_AR =
1
2
L • I_AP² •
V_DSS
V_DSS - V _DD
I _AP
I_D
V_(BR)DSS
V_DS
VDD
0
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
10 V
VDS
= 10 V
Switching Time Waveform
Vin ^10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
t_f
Rev.0.01, Jul.15.2004, page 5 of 6