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HAT2165N Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching
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HAT2165N
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
± 20
—
—
1.0
—
—
60
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
2.8
3.7
100
5180
1200
380
0.5
33
15
7.1
13
65
60
9.5
0.81
40
Max
—
—
± 10
1
2.5
3.6
5.6
—
—
—
—
—
—
—
—
—
—
—
—
1.06
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nc
nc
nc
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 27.5 A, VGS = 10 V Note4
ID = 27.5 A, VGS = 4.5 V Note4
ID = 27.5 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 55 A
VGS = 10 V, ID = 27.5 A
VDD ≅ 10 V
RL = 0.36 Ω
Rg = 4.7 Ω
IF = 55 A, VGS = 0 Note4
IF = 55 A, VGS = 0
diF/ dt = 100 A/ µs
Rev.0.01, Jul.15.2004, page 2 of 6
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