HAT2165N Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2165N
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
100
10 V Pulse Test
4.5 V
3.0 V
80
2.8 V
60
2.6 V
40
2.4 V
20
V_GS = 2.2 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
250
Pulse Test
200
150
I D = 50 A
100
20 A
50
10 A
0
4
8
12 16 20
Gate to Source Voltage V _GS (V)
Maximum Safe Operation Area
500
100
10
DC^P_O^W_pe=_ra1ti0o¹_nm^m_s^{1s001µ0sµs}
1 Operation in
this area is
limited by R DS(on)
0.1
Tc = 25°C
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
100
V _DS = 10 V
Pulse Test
80
60
40
Tc = 75°C
20
25°C
-25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
5
V_GS = 4.5 V
10 V
2
1
1 3 10 30 100 300 1000
Drain Current I _D (A)
Rev.0.01, Jul.15.2004, page 3 of 6