HAT2165N Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2165N
Static Drain to Source on State Resistance
vs. Temperature
8
Pulse Test
6
4 ^{V GS = 4.5 V}
I D = 10 A, 20 A
50 A
2
10 V
10 A, 20 A, 50 A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
di / dt = 100 A / µs
10
0.1 0.3
V_GS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current I _DR (A)
Dynamic Input Characteristics
40
I _D = 55 A
16
V_GS
V_DD = 5 V
30
10 V
25 V
12
V_DD = 25 V
20
8
V_DS
10 V
10
4
5V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
1000
Forward Transfer Admittance vs.
Drain Current
300
100
Tc = -25°C
30
10
75°C
3
25°C
1
0.3
0.1
0.1
V _DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I _D (A)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
30
VGS = 0
f = 1 MHz
10
0 5 10 15 20 25 30
Drain to Source Voltage V _DS (V)
1000
Switching Characteristics
300
100
t _d(off)
30
tf
t _d(on)
10
tr
3
V_GS = 10 V , V_DS = 10 V
Rg = 4.7 Ω, duty < 1 %
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current I _D (A)
Rev.0.01, Jul.15.2004, page 4 of 6