HAT2165N Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2165N
Silicon N Channel Power MOS FET
Power Switching
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R_DS(on) = 2.8 mΩ typ. (at V_GS = 10 V)
Outline
LFPAK-i
5678
DDDD
4
G
1(S)
2(S)
3(S)
4(G)
SSS
12 3
8(D)
7(D)
6(D)
5(D)
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Preliminary
Rev.0.01
Jul.15.2004
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
I_AP ^{Note 2}
E_AR ^{Note 2}
Pch ^Note3
θch-C
Tch
Tstg
Ratings
30
±20
55
220
55
30
90
(30)
(4.17)
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.0.01, Jul.15.2004, page 1 of 6