HAT2131R Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2131R
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1 _0.1
0.05
0.02
0.01 _0.01
0.001
1shot ^pulse
θch – f (t) = γ s (t) • θch – f
θch – f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
P_DM
D = ^PW
T
PW
T
0.0001
10 µ 100 µ 1 m 10 m 100 m
1
10
100 1000 10000
Pulse Width PW (s)
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor
10 Ω
D.U.T.
Vout
Monitor
R_L
Vin
10 V
V_DD
= 250 V
Vin
Vout
10%
10%
td(on)
90%
tr
90%
90%
td(off)
10%
tf
REJ03G1815-0100 Rev.1.00 Jul 17, 2009
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