HAT2131R Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2131R
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
100
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
10
1
10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics (Typical)
800
I_D = 0.9 A
Ta = 25°C
16
V_GS
600
12
V_DS = 100 V
400
250 V
8
V_DS
200
4
V_DS = 250 V
100 V
0
0
0
8 16 24 32 40
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
2.5
V_DS = 10 V
2.0
1.5
I_D = 10 mA
1 mA
1.0
0.1 mA
0.5
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Typical Capacitance vs.
Drain to Source Voltage
10000
V_GS = 0
f = 1 MHz
Ta = 25°C
1000
Ciss
100
Coss
10
Crss
1
0
40 80 120 160 200
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
5
V_GS = 0 V
Ta = 25 °C
4 ^{Pulse Test}
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage V_SD (V)
REJ03G1815-0100 Rev.1.00 Jul 17, 2009
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