HAT2131R Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2131R
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max Unit
Test conditions
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
V_(BR)DSS
350
—
—
V I_D = 10 mA, V_GS = 0
I_DSS
—
—
0.1
µA V_DS = 350 V, V_GS = 0
I_GSS
—
—
±0.1 µA V_GS = ±20 V, V_DS = 0
V_GS(off)
1.0
—
2.5
V V_DS = 10 V, I_D = 1 mA
|yfs|
1.2
2.0
—
S I_D = 0.45 A, V_DS = 10 V ^Note3
R_DS(on)
—
2.5
3.0
Ω I_D = 0.45 A, V_GS = 10 V ^Note3
R_DS(on)
—
2.6
3.2
Ω I_D = 0.45 A, V_GS = 4 V ^Note3
Ciss
—
460
—
pF V_DS = 25 V
Coss
—
32
—
pF ^VGS ^{= 0}
Crss
—
8
—
pF ^{f = 1 MHz}
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t_d(on)
—
15
—
ns I_D = 0.45 A
t_r
—
13
—
ns ^VGS ^{= 10 V}
t_d(off)
—
76
—
ns ^{RL = 556 Ω}
t_f
—
50
—
ns ^{Rg = 10 Ω}
Total gate charge
Gate to source charge
Gate to drain charge
Qg
—
20
—
nC V_DD = 250 V
Qgs
—
1
—
nC ^VGS ^{= 10 V}
Qgd
—
6
—
nC ^{ID = 0.9 A}
Body-drain diode forward voltage
V_DF
—
0.8
1.2
V I_F = 0.9 A, V_GS = 0 ^Note3
Body-drain diode reverse recovery time
t_rr
—
220
—
ns I_F = 0.9 A, V_GS = 0
di_F/dt = 100 A/µs
Notes: 3. Pulse test
REJ03G1815-0100 Rev.1.00 Jul 17, 2009
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