HAT2131R Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2131R
Silicon N Channel Power MOS FET
Power Switching
Features
• Low on-resistance
• Low drive current
• High density mounting
• Capable of 4 V gate drive
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
87 ⁶⁵
4
G
1 ²³⁴
5678
DDDD
SSS
123
REJ03G1815-0100
Rev.1.00
Jul 17, 2009
1, 2, 3
4
5, 6, 7, 8
Source
Gate
Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
V_DSS
350
Gate to source voltage
V_GSS
±20
Drain current
Drain peak current
I_D
0.9
I_{D (pulse)} ^Note1
7.2
Body-drain diode reverse drain current
I_DR
0.9
Body-drain diode reverse drain peak current
I_{DR (pulse)} ^Note1
7.2
Channel dissipation
Pch ^Note2
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C
°C
REJ03G1815-0100 Rev.1.00 Jul 17, 2009
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