HAT2131R Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2131R
Main Characteristics
Maximum Safe Operation Area
100
10
10 µs
PW = 100 µs
1
0.1
0.01
Operation in this
area is limited by
R_DS(on)
Ta = 25°C
0.001 ^{1 shot}
0.1
1
10
100
1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
5
V_DS = 10 V
Pulse Test
4
3
2
1
Tc = 75°C
25°C
−25°C
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical) (1)
10
V_GS = 10 V
Pulse Test
8
I_D = 0.9 A
6
0.45 A
4
0.1 A
2
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
REJ03G1815-0100 Rev.1.00 Jul 17, 2009
Page 3 of 6
Typical Output Characteristics
5
Ta = 25°C
Pulse Test
4
4V ^3V
10 V
2.8 V
3
2
2.6 V
1
2.4 V
V_GS = 2.2 V
0
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
10
Ta = 25°C
Pulse Test
V_GS = 4 V
3
10 V
1
0.1
1
10
Drain Current I_D (A)
Static Drain to Source on State Resistance
vs. Temperature (Typical) (2)
10
V_GS = 4 V
Pulse Test
8
I_D = 0.9 A
6
0.45 A
4
0.1 A
2
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)