HAT1139H Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

HAT1139H
10
Reverse Drain Current vs.
Source to Drain Voltage
–50
–40
–10 V
–30
–5 V
–20
V_GS = 0 V, 5 V
–10
Pulse Test
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
D=1
1
0.5
0.2
0.1
0.1 _0.05
0.02
0.01 ^0.01
1shot ^pulse
0.001
10 µ 100 µ 1 m
θ _{ch - c(t) =} γ_{s (t)} •_· θ_{ch - c}
θ _{ch - c = 8.33°C/ W, Tc = 25°C}
PDM
PW
T
10 m 100 m 1
10
100
Pulse Width PW (s)
D=
PW
T
1000 10000
Switching Time Test Circuit
Vin Monitor
4.7 Ω
Vin
-10 V
D.U.T.
Vout
Monitor
R_L
VDD
= -10 V
Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
t_f
Rev.2.00 Jun. 22, 2005, page 5 of 6