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HAT1139H Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching | |||
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HAT1139H
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Bodyâdrain diode forward voltage
Bodyâdrain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
â30
â
â
â1.0
â
â
27
â
â
â
â
â
â
â
â
â
â
â
â
Typ
â
â
â
â
7.0
10.0
45
3200
720
550
73
8
14
23
48
247
186
â0.91
185
Max
â
±0.1
â1
â2.5
9.0
14.5
â
â
â
â
â
â
â
â
â
â
â
â1.19
â
Unit
V
µA
µA
V
mâ¦
mâ¦
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = â10 mA, VGS = 0
VGS = â20/+10 V, VDS = 0
VDS = â30 V, VGS = 0
VDS = â10 V, I D = -1 mA
ID = â15 A, VGS = -10 V Note4
ID = â15 A, VGS = -4.5 V Note4
ID = â15 A, VDS = -10 V Note4
VDS = â10 V, VGS = 0,
f = 1 MHz
VDD = â10 V, VGS = â10 V,
ID = â30 A
VGS = â10 V, ID = â15 A,
VDD â
â10 V, RL = 0.67 â¦,
Rg = 4.7 â¦
IF = â30 A, VGS = 0 Note4
IF = â30 A, VGS = 0
diF/ dt = 100 A/ µs
Rev.2.00 Jun. 22, 2005, page 2 of 6
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