HAT1139H Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

HAT1139H
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
I_D = –5 A, –10 A, –15 A
12 _{VGS = –4.5 V}
8
–5 A, –10 A, –15 A
–10 V
4
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
Body-Drain Diode Reverse
Recovery Time
100
10
–0.1
di/dt = 100 A/µs
V_GS = 0, Ta = 25°C
–1
–10
–100
Reverse Drain Current I_DR (A)
0
–10
Dynamic Input Characteristics
V_DD = –5 V
–10 V
–25 V
0
I_D = –30 A
–4
–20
–8
V_DS
–30
V_DD = –5 V
–10 V
–25 V
–40
0 40 80
–12
V_GS
120 160
–16
200
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
100
Tc = –25°C
10
25°C
75°C
1
V _DS = –10 V
Pulse Test
0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1000
Coss
Crss
V_GS = 0
f = 1 MHz
100
0 –5 –10 –15 –20 –25 –30
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
td(off)
tf
100
td(on)
10 tr
V_GS = -10 V , V_DS = -10 V
Rg = 4.7 Ω, duty < 1 %
1
-0.1
-1
-10
-100
Drain Current I_D (A)
Rev.2.00 Jun. 22, 2005, page 4 of 6