HAT1139H Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

HAT1139H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
1 _{Drive Operation}
0
50
100
150 200
Case Temperature Tc (°C)
Typical Output Characteristics
–50
-3.4 V
-4.5 V
-3.2 V -3.1 V
–40
-10 V
-3.0 V
-2.9 V
–30
-2.8 V
–20
-2.7 V
-2.6 V
–10
V_GS = -2.5 V
Pulse Test
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.4
Pulse Test
–0.3
–0.2
–0.1
0
0
I_D = -15 A
-10 A
-5 A
–4
–8 –12 –16 –20
Gate to Source Voltage V_GS (V)
Rev.2.00 Jun. 22, 2005, page 3 of 6
Maximum Safe Operation Area
–1000
–100
–10
–1.0
–0.1
Oper^Da^Ctio^On^pein^{ratiPoWn (=PW101<mm1s01s0s0)}
10
µ_s
µ_s
this area is
limited by R DS(on)
–0.01
Tc = 25°C
–0.001 ^{1 shot Pulse}
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
–50
V_DS = –10 V
Pulse Test
–40
–30
–20
Tc = 75°C
–10
25°C
–25°C
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
V_GS = –4.5 V
20
10
–10 V
5
2
1
–1
–10
–100
–1000
Drain Current I_D (A)