HAT1139H Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

HAT1139H
Silicon P Channel Power MOS FET
Power Switching
Features
• Capable of –4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R_DS(on) = 7.0 mΩ typ. (at V_GS = –10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
5
5
D
D
1 ²³⁴
2
3
G
G
S
S
1
4
REJ03G1244-0200
Rev.2.00
Jun.22.2005
1, 4 Source
2, 3 Gate
5 Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation : Tc = 25°C
3. 2 Drive operation : Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
Pch ^Note2
Pch ^Note3
Tch
Tstg
Ratings
–30
–25 / +20
–30
–120
–30
15
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.2.00 Jun. 22, 2005, page 1 of 6