HAT1127H Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

HAT1127H
Reverse Drain Current vs.
Source to Drain Voltage
–50
–40
–10 V
–5 V
–30
V_GS = 0
–20
–10
Pulse Test
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 _0.1
θch - f(t) = γs (t) x θch - f
θch - f = 4.17°C/W, Tc = 25°C
0.05
0.03
0.01
0.02
0.011shot
pulse
P_DM
D=
PW
T
PW
T
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
–10 V
V_DD
= –10 V
Waveform
Vin
10%
90%
90%
90%
Vout
10%
10%
td(on)
tr
td(off)
tf
Rev.5.00 Jan 20, 2006 page 5 of 6