HAT1127H Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

HAT1127H
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 3. Pulse test
Symbol
V_(BR)DSS
I_GSS
I_DSS
V_GS(off)
R_DS(on)
R_DS(on)
|y_fs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t_d(on)
t_r
t_d(off)
t_f
V_DF
t_rr
Min
–30
—
—
–1.0
—
—
40
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
3.6
5.3
70
5600
1180
890
125
15
28
25
40
130
115
–0.88
120
Max
—
±0.1
–1
–2.5
4.5
7.7
—
—
—
—
—
—
—
—
—
—
—
–1.15
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
I_D = –10 mA, V_GS = 0
V_GS = –20/+10 V, V_DS = 0
V_DS = –30 V, V_GS = 0
V_DS = –10 V, I _D = –1 mA
I_D = –20 A, V_GS = –10 V ^Note3
I_D = –20 A, V_GS = –4.5 V ^Note3
I_D = –20 A, V_DS = –10 V ^Note3
V_DS = –10 V, V_GS = 0,
f = 1 MHz
V_DD = –10 V, V_GS = –10 V,
I_D = –40 A
V_GS = –10 V, I_D = -20 A,
V_DD ≅ –10 V, R_L = 0.5 Ω,
Rg = 4.7 Ω
I_F = –40 A, V_GS = 0 ^Note3
I_F = –40 A, V_GS = 0
di_F/ dt = 100 A/ µs
Rev.5.00 Jan 20, 2006 page 2 of 6