HAT1127H Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

HAT1127H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
–10 V ^{Typical Output Characteristics}
–4.5 V
–50
–2.9 V
–2.8 V
–40
–3.0 V
–2.7 V
–30
–2.6 V
–2.5 V
–20
V_GS = –2.4 V
–10
Pulse Test
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.20
Pulse Test
–0.16
–0.12
–0.08
I_D = –20 A
–0.04
–10 A
–5 A
0
–4 –8 –12 –16 –20
Gate to Source Voltage V_GS (V)
Rev.5.00 Jan 20, 2006 page 3 of 6
Maximum Safe Operation Area
–500
–100
–10
100
DCPWOp=er1a01tiommnss
10
µ_s
µ_s
–1 ^{Operation in this area}
is limited by R_DS(on)
–0.1
Ta = 25°C
1 shot Pulse
–0.01
–0.1 –0.3 –1 –3
–10 –30 –100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
–50
V_DS = –10 V
Pulse Test
–40
–30
Tc = 75°C
–20
–10
25°C
–25°C
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10
V_GS = –4.5 V
5
–10 V
2
1
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50 –100
Drain Current I_D (A)