HAT1127H Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

HAT1127H
Silicon P Channel Power MOS FET
Power Switching
Features
• Capable of –4.5 V gate drive
• Low drive current
• High density mounting
• Ultra Low on-resistance
R_DS(on) = 3.6 mΩ typ. (at V_GS = –10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
4
G
1 ²³⁴
5
D
SSS
123
REJ03G1330-0500
Rev.5.00
Jan 20, 2006
1, 2, 3
4
5
Source
Gate
Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel to Case Thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
Pch ^Note2
θch-c ^Note2
Tch
Tstg
Ratings
–30
–20/+10
–40
–160
–40
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
Rev.5.00 Jan 20, 2006 page 1 of 6