HAT1127H Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

HAT1127H
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
12
I_D = –5 A, –10 A, –20 A
8
V_GS = –4.5 V
4
–10 V
–5 A, –10 A, –20 A
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
1000
500
Body–Drain Diode Reverse
Recovery Time
200
100
50
20
di/dt = –100 A/µs
V_GS = 0, Ta = 25°C
10
–0.1 –0.3 –1 –3 –10 –30 –100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
0
0
V_DD = –5 V
–10 V
–10
–25 V
–4
–20
–30 ^VDS
–40
I_D = –40 A
–50
0
40 80
V_DD = –25 V
–10 V _–8
–5 V
–12
V_GS
–16
–20
120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
200
100
Tc = –25°C
30
25°C
75°C
10
3
1
V_DS = –10 V
Pulse Test
0.2
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current I_D (A)
30000
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
Ciss
Coss
Crss
100
30
0
V_GS = 0
f = 1 MHz
–10 –20 –30 –40 –50
Drain to Source Voltage V_DS (V)
500
Switching Characteristics
200
td(off)
100
tf
50
tr
20
td(on)
10
V_GS = –10 V, V_DS = –10 V
Rg = 4.7 Ω, duty ≤ 1 %
5
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50
Drain Current I_D (A)
Rev.5.00 Jan 20, 2006 page 4 of 6