2SK1835 Datasheet, PDF (5/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1835
Reverse Drain Current vs.
Source to Drain Voltage
5
Pulse Test
4
3
2
1 _{V GS = 15 V}
0,–5 V
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0
D=1
0.5
0.3
0.1
0.03
0.2
0.1
0.05
0.02
0.01
1 ^{shot Pulse}
0.01
10 µ
100 µ
1m
10 m
Pulse Width PW (S)
Tc = 25°C
θch – c(t) = γs(t) • θch – c
θch – c = 1.0°C / W, Tc = 25°C
P DM
PW
T
D
=
PW
T
100 m
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T
Vout Monitor
RL
Vin
10 V
50 Ω
VDD ^=.. 30 V
Waveforms
90 %
Vin
10 %
Vout
10 %
td _(on)
90 %
tr
90 %
td _(off)
10 %
tf
REJ03G0978-0400 Rev.4.00 Jun 04, 2008
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