2SK1835 Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1835
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
I_D(pulse) ^Note1
I_DR
Pch ^Note2
Tch
Tstg
Ratings
1500
±20
4
10
4
125
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 3. Pulse Test
Symbol
V_(BR)DSS
I_GSS
I_DSS
V_GS(off)
R_DS(on)
|y_fs|
Ciss
Coss
Crss
t_d(on)
t_r
t_d(off)
t_f
V_DF
t_rr
Min
1500
—
—
2.0
—
0.9
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
4.6
1.4
1700
230
100
25
80
230
80
0.85
2500
Max
—
±1
500
4.0
7.0
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
Ω
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
V_GS = ±20 V, V_DS = 0
V_DS = 1200 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 2 A, V_GS = 15 V ^{Note 3}
S
I_D = 2 A, V_DS = 20 V ^{Note 3}
pF V_DS = 10 V, V_GS = 0,
pF ^{f = 1 MHz}
pF
ns I_D = 2A, V_GS = 10 V,
ns ^RL ^{= 15 Ω}
ns
ns
V I_F = 4 A, V_GS = 0
ns I_F = 4 A, V_GS = 0,
di_F/dt = 100 A/µs
REJ03G0978-0400 Rev.4.00 Jun 04, 2008
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