2SK1835 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1835
Static Drain to Source on State
Resistance vs. Temperature
25
Pulse Test
20 ^{VGS = 15 V}
15
I_D= 3 A
10
2A
5
1A
0
–40
0
40 80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
5000
2000
1000
500
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
200
100
5
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
1000
20
I_D =4A
800
V _GS
16
600
400
200
0
V _DS
V _DD = 600 V
400 V
250 V
V_DD = 600 V
400 V
250 V
40
80 120 160
Gate Charge Qg (nc)
12
8
4
0
200
Forward Transfer Admittance
vs. Drain Current
10
5 Pulse Test
V_DS = 20 V
2
1
0.5
Tc = –25°C
25°C
75°C
0.2
0.1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1000
100
V_GS = 0
f = 1 MHz
10
0
10 20
Coss
Crss
30 40
50
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
500
td _(off)
200
100
tf
50
tr
td _(on)
20 _{VGS = 10 V, duty 1 %}
PW = 5 µs
10
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
REJ03G0978-0400 Rev.4.00 Jun 04, 2008
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