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| 2SK1835 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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2SK1835
Silicon N Channel MOS FET
Application
High speed power switching
Features
⢠High breakdown voltage (VDSS = 1500 V)
⢠High speed switching
⢠Low drive current
⢠No secondary breakdown
⢠Suitable for switching regulator
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
REJ03G0978-0400
Rev.4.00
Jun 04, 2008
D
1
2
3
G
S
1. Gate
2. Drain
(Flange)
3. Source
REJ03G0978-0400 Rev.4.00 Jun 04, 2008
Page 1 of 6
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