2SK1835 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1835
Main Characteristics
Power vs. Temperature Derating
200
150
100
50
0
50
100
150
200
Case Temperature T_C (°C)
Typical Output Characteristics
5
10 V
8V
4 ^{Pulse Test}
6V
3
5V
2
1
V _GS = 4 V
0
10
20
30 40
50
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
25
Pulse Test
20
15
3A
10
2A
5
I_D = 1 A
0
4
8
12 16
20
Gate to Source Voltage V_GS (V)
REJ03G0978-0400 Rev.4.00 Jun 04, 2008
Page 3 of 6
Maximum Safe Operation Area
50
30
10
3
1
0.3
DC
PW
Operatio=n
Operation in this
area is limited by
1(T0cm=s2(51_°sCh)ot)
R _DS (on)
0.1
Ta = 25°C
0.05
10 30 100 300 1000
3000 10000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
5
4
V_DS = 20 V
Pulse Test
Tc = –25°C
25°C
3
75°C
2
1
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
50
20 ^{Pulse Test}
10
5
V_GS = 10 V
15 V
2
1
0.5
0.2
0.5 1 2
5 10 20
Drain Current I_D (A)