2SK1400A_10 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

2SK1400A
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1.0
0.5
T_C = 25°C
0.3 _0.2
0.1
0.1 _0.05
0^.02
0.03 _{10S.0h1ot Pulse}
0.01
10 μ
100 μ
1m
10 m
θch–c (t) = γ_S (t) • θch–c
θch–c = 2.50°C/W, T_C = 25°C
P_DM
PW
T
D
=
PW
T
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Vin
10 V
50 Ω
D.U.T
Vout Monitor
R_L
V_DD
= 30 V
Waveforms
90%
Vin _10%
Vout ^10%
t_{d (on)}
90%
t_r
90%
t_{d (off)}
10%
t_f
REJ03G0940-0300 Rev.3.00
Apr 01, 2010
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