2SK1400A_10 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

2SK1400A
Silicon N Channel MOS FET
High Speed Power Switching
Features
 Low on-resistance
RDS(on) = 0.6  typ. (at I_D = 4 A, V_GS = 10 V, Ta = 25°C)
 High speed switching
 Low drive current
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
G
123
Preliminary Datasheet
REJ03G0940-0300
Rev.3.00
Apr 01, 2010
D
1. Gate
2. Drain
(Flange)
3. Source
S
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Value at T_C = 25°C
Symbol
V_DSS
V_GSS
I_D
I_D(pulse) ^Note1
I_DR
Pch ^Note2
Tch
Tstg
Ratings
350
30
7
28
7
50
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
REJ03G0940-0300 Rev.3.00
Apr 01, 2010
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