2SK1400A_10 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

2SK1400A
10000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1000
Coss
100
Crss
V_GS = 0 V
f = 1 MHz
Ta = 25°C
10
0
10
20 30 40 50
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
10
V_GS = 0
Ta = 25°C
8 ^{Pulse Test}
6
4
2
0
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Preliminary
Dynamic Input Characteristics (Typical)
500
20
400
V_DD = 50 V
16
100 V
200 V
300
V_GS
12
200 ^VDS
8
100
200 V
100 V
4
I_D = 7 A
V_DD = 50 V
Ta = 25°C
0
0
8
16 24 32 40
Gate Charge Qg (nc)
REJ03G0940-0300 Rev.3.00
Apr 01, 2010
Page 4 of 6