2SK1400A_10 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

2SK1400A
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage V_(BR)DSS 350
—
—
Gate to source breakdown voltage V_(BR)GSS 30
—
—
Gate to source leak current
I_GSS
—
—
10
Zero gate voltage drain current
I_DSS
—
—
250
Gate to source cutoff voltage
V_GS(off)
2.0
—
3.0
Static drain to source on state
resistance
R_DS(on)
—
0.6
0.8
Forward transfer admittance
|y_fs|
3.0
5.0
—
Input capacitance
Ciss
—
635
—
Output capacitance
Coss
—
230
—
Reverse transfer capacitance
Crss
—
40
—
V I_D = 10 mA, V_GS = 0
V I_G = 100 A, V_DS = 0
A V_GS = 25 V, V_DS = 0
A V_DS = 280 V, V_GS = 0
V I_D = 1 mA, V_DS = 10 V

I_D = 4 A, V_GS = 10 V ^Note3
S
I_D = 4 A, V_DS = 10 V ^Note3
pF V_DS = 10 V
pF ^VGS ^{= 0}
pF ^{f = 1 MHz}
Turn-on delay time
t_d(on)
—
10
—
Rise time
t_r
—
50
—
Turn-off delay time
t_d(off)
—
60
—
Fall time
t_f
—
40
—
Body to drain diode forward voltage
V_DF
—
1.0
—
Body to drain diode reverse recovery trr
—
240
—
time
Note: 3. Pulse test
ns I_D = 4 A
ns ^VGS ^{= 10 V}
ns ^{RL = 7.5 }
ns
V
I_F = 7 A, V_GS = 0 ^Note3
ns I_F = 7 A, V_GS = 0
di_F/dt = 100 A/s
REJ03G0940-0300 Rev.3.00
Apr 01, 2010
Page 2 of 6