2SK1400A_10 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

2SK1400A
Main Characteristics
Maximum Safe Operation Area
100
10
P_W
10 _μs
= _{100 μs}
Operation in this
1 _{area is limited by}
R_DS(on)
Tc = 25°C
1 shot
0.1
1
10
100
1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
10
V_DS = 20 V
Pulse Test
8
6
4
75°C
Ta = 25°C
2
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature (Typical)
2.0
V_GS = 10 V
Pulse Test
1.6
1.2
I_D = 10 A ^{5 A}
0.8
2A
0.4
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
REJ03G0940-0300 Rev.3.00
Apr 01, 2010
Preliminary
Typical Output Characteristics
10
15 V
5.5 V _{Ta = 25°C}
6V
Pulse Test
8
10 V
5V
6
4
4.5 V
2
4V
V_GS = 3.5 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Static Drain to Source on State
Resistance vs. Drain Current (Typical)
5
V_GS = 10 V
Ta = 25°C
2 Pulse Test
1
0.5
0.2
0.1
0.05
0.5 1.0 2
5 10 20 50
Drain Current I_D (A)
Body to Drain Diode Reverse
Recovery Time (Typical)
500
200
100
50
20
10
5
0.2
di/dt = 50 A/μs, V_GS = 0
Ta = 25°C, Pulse Test
0.5 1 2
5 10 20
Reverse Drain Current I_DR (A)
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