2SC5998 Datasheet, PDF (5/11 Pages) Renesas Technology Corp – Silicon NPN Epitaxial High Frequency Medium Power Amplifier

2SC5998
Intermodulation Distortion
40
V_CE = 3.6 V
Icq = 20 mA
30 _{f = 0.5 GHz}
∆f = 1 MHz
20
Fund
(1tone)
IMD3
10
IMD5
0
-10
-20
-30 -20 -10 0
10 20 30
Input Power Pin (dBm)
Intermodulation Distortion
40
V_CE = 4.5 V
Icq = 20 mA
30 _{f = 0.5 GHz}
∆f = 1 MHz
20
10
0
Fund
(1tone)
IMD3
IMD5
-10
-20
-30 -20 -10 0 10 20 30
Input Power Pin (dBm)
0.5GHz Evaluation Circuit
VBB
1 µF
1 µF
VCC
100 pF
68 ohm
100 pF
30 pF
10 ohm
56 nH
56 nH
5.1 nH
20 pF
20 pF
5.1 nH
OUT
IN
10 pF
1 pF
1 pF
8 pF
Rev.1.01, Jan 27, 2006, page 5 of 10