2SC5998 Datasheet, PDF (2/11 Pages) Renesas Technology Corp – Silicon NPN Epitaxial High Frequency Medium Power Amplifier

2SC5998
Electrical Characteristics
Item
DC current transfer ratio
Collector output capacitance
Reverse Transfer Capacitance
Symbol Min
h_FE
110
C_ob

C_re

Transition Frequency
f_T

Maximum Available Gain
MAG

Power Gain
PG
11
1dB Compression Point at output P1dB

Power Added Efficiency
PAE

Typ
150
2.0
0.95
10.5
22
13
28
70
Max
190

1.5





Unit

pF
pF
GHz
dB
dB
dBm
%
(Ta = 25°C)
Test Conditions
V_CE = 3 V, I_C = 100 mA
V_CB = 3 V, I_E = 0, f = 1 MHz
V_CB = 3 V, f = 1 MHz,
Emitter grounded
V_CE = 3.6 V, I_C = 100 mA,
f = 1 GHz
V_CE = 3.6 V, I_C = 100 mA,
f = 0.5 GHz
V_CE = 3.6 V, I_Cq = 20 mA,
f = 0.5 GHz, Pin = +16 dBm
V_CE = 3.6 V, I_Cq = 20 mA,
f = 0.5 GHz
V_CE = 3.6 V, I_Cq =20 mA,
f = 0.5 GHz, Pin = +16 dBm
Main Characteristics
Collector Power Dissipation Curve
1.0
*FR – 4 (25 x 30 x 1 mm)
0.8
on PCB
0.6
0.4
0.2
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
500
4.0 mA
3.5 mA
400
3.0 mA
2.5 mA
300
2.0 mA
1.5 mA
200
1.0 mA
100
I_B = 0.5 mA
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
500
V_CE = 3 V
400
300
200
100
0
0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage V_BE (V)
DC Current Transfer Ratio vs.
Collector Current
200
150
100
50
V_CE = 3 V
0
1
10
100
1000
Collector Current I_C (mA)
Rev.1.01, Jan 27, 2006, page 2 of 10