2SC5998 Datasheet, PDF (4/11 Pages) Renesas Technology Corp – Silicon NPN Epitaxial High Frequency Medium Power Amplifier

2SC5998
Pin vs. Pout, PG
40
V_CE = 3.6 V
35 Icq = 20 mA
f = 0.5 GHz
30
Pout
25
20
15
10
5
0
0
PG
5 10 15 20 25 30
Pin (dBm)
Operation Current, Power Added Efficiency
0.6
V_CE = 3.6 V
0.5 ^{Icq = 20 mA}
f = 0.5 GHz
0.4
100
Ic op
80
0.3
60
PAE
0.2
40
0.1
20
0
0
0 5 10 15 20 25 30
Pin (dBm)
Harmonic Distortion
40
V_CE = 3.6 V
30 ^{Icq = 20 mA}
f = 0.5 GHz
Fund
20
2nd HD
10
0
3rd HD
-10
-20
-30 -20 -10 0 10 20 30
Pin (dBm)
Pin vs. Pout, PG
40
V_CE = 4.5 V
35 Icq = 20 mA
f = 0.5 GHz
30
Pout
25
20
15
10
PG
5
0
0 5 10 15 20 25 30
Pin (dBm)
Operation Current, Power Added Efficiency
0.6
V_CE = 4.5 V
0.5 ^{Icq = 20 mA}
f = 0.5 GHz
Ic op ₁₀₀
0.4
80
PAE
0.3
60
0.2
40
0.1
20
0
0
0 5 10 15 20 25 30
Pin (dBm)
Harmonic Distortion
40
V_CE = 4.5 V
30 ^{Icq = 20 mA}
f = 0.5 GHz
Fund
20
2nd HD
10
0
-10
3rd HD
-20
-30 -20 -10 0 10 20 30
Pin (dBm)
Rev.1.01, Jan 27, 2006, page 4 of 10