2SC5998 Datasheet, PDF (3/11 Pages) Renesas Technology Corp – Silicon NPN Epitaxial High Frequency Medium Power Amplifier

2SC5998
Collector Output Capacitance vs.
Collector to Base Voltage
4.0
I_E = 0
f = 1 MHz
3.0
2.0
1.0
Reverse Transfer Capacitance vs.
Collector to Base Voltage
2.0
I_E = 0
f = 1 MHz
1.5
1.0
0.5
0
1
2
3
4
5
Collector to Base Voltage V_CB (V)
0
1
2
3
4
5
Collector to Base Voltage V_CB (V)
Transition Frequency vs.
Collector Current
12
f = 1 GHz
10 ^{VCE = 3.6 V}
8
6
4
2
0
1
10
100
1000
Collector Current I_C (mA)
S₂₁ Parameter, Maximum Available Gain,
Maximum Stable Gain vs. Frequency
40
V_CE = 3.6 V
I_C = 100 mA
30
MSG
20
|S₂₁|²
10
MAG
0
0.1
1
10
Frequency f (GHz)
Maximum Available Gain, Maximum Stable Gain
vs. Collector Current
25
V_CE = 3.6 V
MAG
20
MSG
f = 0.5 GHz
15
1 GHz
10
2 GHz
5
3 GHz
0
1
10
100
1000
Collector Current I_C (mA)
Rev.1.01, Jan 27, 2006, page 3 of 10