2SC5998 Datasheet, PDF (1/11 Pages) Renesas Technology Corp – Silicon NPN Epitaxial High Frequency Medium Power Amplifier

2SC5998
Silicon NPN Epitaxial
High Frequency Medium Power Amplifier
REJ03G0169-0101
Rev.1.01
Jan 27, 2006
Features
• High Transition Frequency
f_T = 11 GHz typ.
• High gain and Excellent Efficiency
Maximum Available Gain (MAG) = +22 dB typ. at V_CE = 3.6 V, I_C = 100 mA, f = 500 MHz
Power Added Efficiency (PAE) = 70% typ. at Pin = +16 dBm, f = 500 MHz
• High Collector to Emitter Voltage
V_CEO = 5 V
• Ideal for up to 2 GHz applications.
e.g.FRS(Family Radio Service) Power Amplifier ,
GMRS (General Mobile Radio Service) Driver Amplifier
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
Note: Marking is “YC-”.
3
1
2
1. Collector
2. Base
3. Emitter
Absolute Maximum Ratings
Item
Symbol
Collector to base voltage
V_CBO
Collector to emitter voltage
V_CEO
Emitter to base voltage
V_EBO
Collector current
I_C
Collector power dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
Note: Value on PCB ( FR-4 : 25 x 30 x 1.0mm Double side )
Ratings
13
5
1.5
500
700^note
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Rev.1.01, Jan 27, 2006, page 1 of 10