R01DS0012EJ0110_15 Datasheet, PDF (48/70 Pages) Renesas Technology Corp – RENESAS MCU

R8C/34W Group, R8C/34X Group, R8C/34Y Group, R8C/34Z Group
5. Electrical Characteristics
Table 5.5 Flash Memory (Program ROM) Electrical Characteristics
Symbol
Parameter
−
Program/erase endurance ⁽²⁾
−
−
−
−
−
td(SR-SUS)
−
−
Byte program time
(program/erase endurance ≤ 100 times)
Byte program time
(program/erase endurance > 100 times)
Word program time
(program/erase endurance ≤ 100 times)
Word program time
(program/erase endurance > 100 times)
Block erase time
Time delay from suspend request until
suspend
Interval from erase start/restart until
following suspend request
Time from suspend until erase restart
td(CMDRST-
READY)
−
−
−
Time from when command is forcibly
terminated until reading is enabled
Program, erase voltage
Read voltage
Program, erase temperature
−
Data hold time ⁽⁷⁾
Conditions
R8C/34X, R8C/34Z Group
R8C/34W, R8C/34Y Group
Min.
100 ⁽³⁾
1,000 ⁽³⁾
−
−
−
−
−
−
0
−
−
2.7
2.7
−40
Ambient temperature = 55°C ⁽⁸⁾ 20
Standard
Typ.
Max.
−
−
−
−
60
300
Unit
times
times
µs
60
500
µs
100
400
µs
100
650
µs
0.3
4
s
− 5+CPU clock × ms
3 cycles
−
−
µs
− 30+CPU clock × µs
1 cycle
− 30+CPU clock × µs
1 cycle
−
5.5
V
−
5.5
V
− 85 (J version) °C
125 (K version)
−
−
year
Notes:
1. VCC = 2.7 to 5.5 V at Topr = −40 to 85°C (J version) / −40 to 125°C (K version) (under consideration), unless otherwise
specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100, 1,000), each block can be erased n times. For example, if 1,024 1-
byte writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erasure endurance of each block and limit
the number of erase operations to a certain number.
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
8. This data hold time includes 3,000 hours in Ta = 125°C and 7,000 hours in Ta = 85°C.
R01DS0012EJ0110 Rev.1.10
Jan 31, 2013
Page 48 of 67