R1EV5801MB_16 Datasheet, PDF (4/22 Pages) Renesas Technology Corp – 1M EEPROM (128-Kword × 8-bit)Ready Busy and RES function

R1EV5801MB Series
Recommended DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Supply voltage
V_CC
2.7
3.0
5.5
Input voltage*³
V_SS
0
0
0
V_IL
0.3*¹

0.8
V_IH
1.9*²

V_CC + 0.3
V_H
V_CC 0.5

V_CC + 1.0
Operating temperature
Topr
–40

+85
Notes: 1. V_IL (min): 1.0 V for pulse width  50 ns
2. V_IH (min): 2.2 V for V_CC = 3.6 to 5.5 V
3. Refer to the recommended AC test condition during read and write operation.
Unit
V
V
V
V
V
C
DC Characteristics (Ta = -40 to +85C, V_CC = 2.7 V to 5.5 V)
Parameter
Symbol Min
Typ
Input leakage current
I_LI


Output leakage current
I_LO


Standby V_CC current
I_CC1


I_CC2


Operating V_CC current
I_CC3








Output low voltage
V_OL


Output high voltage
V_OH
V_CC  0.8

Notes: 1. I_LI on RES: 100 A (max)
Max Unit
Test conditions
2*¹
A V_CC = 5.5 V, Vin =5.5 V
2
A V_CC = 5.5 V, Vout = 5.5/0.4 V
20
A CE = V_CC
1
mA CE = V_IH
15
mA Iout = 0 mA, Duty = 100%,
Cycle = 1 µs, V_CC = 5.5 V
6
mA Iout = 0 mA, Duty = 100%,
Cycle = 1 µs, V_CC = 3.3 V
50
mA Iout = 0 mA, Duty = 100%,
Cycle = 150 ns, V_CC = 5.5 V
15
mA Iout = 0 mA, Duty = 100%,
Cycle = 250 ns, V_CC = 3.3 V
0.4
V I_OL = 2.1 mA

V I_OH = 400 A
Capacitance (Ta = +25C, f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Input capacitance*¹
Output capacitance*¹
Cin
Cout


6


12
Note: 1. This parameter is periodically sampled and not 100 tested.
Unit
Test conditions
pF Vin = 0 V
pF Vout = 0 V
R10DS0209EJ0200 Rev.2.00
May 12, 2016
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