R1EV5801MB_16 Datasheet, PDF (1/22 Pages) Renesas Technology Corp – 1M EEPROM (128-Kword × 8-bit)Ready Busy and RES function

R1EV5801MB Series
1M EEPROM (128-Kword × 8-bit)Ready/
Busy and RES function
Data Sheet
R10DS0209EJ0200
Rev.2.00
May 12, 2016
Description
Renesas Electronics’ R1EV5801MB is an electrically erasable and programmable ROM organized as 131072-word  8-
bit. It has realized high speed, low power consumption and high reliability by employing advanced MONOS memory
technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the
write operations faster.
Features
 Single voltage supply: 2.7 V to 5.5 V
 Access time:
 150 ns (max) at Vcc=4.5 V to 5.5 V
 250 ns (max) at Vcc=2.7 V to 5.5 V
 Power dissipation
 Active: 20 mW/MHz, (typ)
 Standby: 110 W (max)
 On-chip latches: address, data, CE, OE, WE
 Automatic byte write: 10 ms (max)
 Automatic page write (128 bytes): 10 ms (max)
 Data polling and RDY/Busy
 Data protection circuit on power on/off
 Conforms to JEDEC byte-wide standard
 Reliable CMOS with MONOS cell technology
 10⁴ or more erase/write cycles
 10 or more years data retention
 Software data protection
 Write protection by RES pin
 Temperature range: 40 to +85C
 There are lead free products.
R10DS0209EJ0200 Rev.2.00
May 12, 2016
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