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| R1EV5801MB_16 Datasheet, PDF (3/22 Pages) Renesas Technology Corp – 1M EEPROM (128-Kword × 8-bit)Ready Busy and RES function | |||
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R1EV5801MB Series
Block Diagram
V CC
V SS
RES
OE
CE
WE
RES
A0
to
A6
A7
to
A16
High voltage generator Voltage detector
Control logic and timing
Address
buffer and
latch
Y decoder
X decoder
I/O0 to I/O7 RDY/Busy
I/O buffer
and
input latch
Y gating
Memory array
Data latch
Operation Table
Operation
CE
OE
WE
RES
Read
Standby
VIL
VIL
VIH
VIH
ï´*2
ï´
VH*1
ï´
Write
VIL
VIH
VIL
VH
Deselect
VIL
VIH
VIH
VH
Write Inhibit
ï´
ï´
VIH
ï´
Data Polling
ï´
VIL
ï´
ï´
VIL
VIL
VIH
VH
Program reset
ï´
ï´
ï´
VIL
Notes: 1. Refer to the recommended DC operating conditions.
2. ï´ : Donât care
RDY/Busy
High-Z
High-Z
High-Z to VOL
High-Z
ï¾
ï¾ï
VOL
High-Z
I/O
Dout
High-Z
Din
High-Z
ï¾
ï¾
Dout (I/O7)
High-Z
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to VSS
Input voltage relative to VSS
Operating temperature range*2
VCC
ï0.6 to +7.0
V
Vin
ï0.5*1 to +7.0
V
Topr
â40 to +85
ï°C
Storage temperature range
Tstg
â55 to +125
ï°C
Notes: 1. Vin min = ï3.0 V for pulse width ï£ 50 ns
2. Including electrical characteristics and data retention
R10DS0209EJ0200 Rev.2.00
May 12, 2016
Page 3 of 20
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